Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress
Top Cited Papers
- 26 February 2016
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 37 (4), 385-388
- https://doi.org/10.1109/led.2016.2535133
Abstract
Gate reliability of normally-off p-type-GaN/AlGaN/GaN high-electron mobility transistors grown on Si substrate subjected to forward bias stress at different gate voltages and temperatures was analyzed. Stress-induced gate current degradation was found to be consistent with the percolation process. Obtained time-to-breakdown data were interpreted using the Weibull statistics, and the maximum allowed gate operating voltage was estimated. The gate degradation was found to be weakly dependent on temperature with an activation energy of 0.1 eV.Keywords
Funding Information
- European Commission Seventh Framework Programme through the HipoSwitch Project (287602)
- Structural Funds of the European Union within the Ministry of Education, Science, Research and Sport, Slovak Republic through the CENTE I (1/2) Project (ITMS 26240120011)
This publication has 14 references indexed in Scilit:
- Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistorsApplied Physics Letters, 2015
- High-voltage normally OFF GaN power transistors on SiC and Si substratesMRS Bulletin, 2015
- Properties of the main Mg-related acceptors in GaN from optical and structural studiesJournal of Applied Physics, 2014
- Benchmarking of Large-Area GaN-on-Si HFET Power Devices for Highly-Efficient, Fast-Switching Converter ApplicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2013
- Current status of GaN power devicesIEICE Electronics Express, 2013
- Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse biasApplied Physics Letters, 2012
- Role of stable and metastable Mg–H complexes in p-type GaN for cw blue laser diodesApplied Physics Letters, 2011
- A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2010
- On the weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination-part I: theory, methodology, experimental techniquesIEEE Transactions on Electron Devices, 2002
- Degradation and breakdown in thin oxide layers: mechanisms, models and reliability predictionMicroelectronics Reliability, 1999