A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
- 1 December 2010
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 2010 International Electron Devices Meeting
- p. 20.3.1-20.3.4
- https://doi.org/10.1109/iedm.2010.5703398
Abstract
In this work, the gate degradation of GaN-based HEMTs is analyzed. We find that the gate degradation does not occur only beyond a critical voltage, but it has a strong voltage accelerated kinetics and a weak temperature dependence. By means of a statistical study we show that the time-to-failure can be fitted best with a Weibull distribution. By using the distribution parameters and a power law model it is possible to perform lifetime extrapolation based on the gate degradation at a defined failure level and temperature for the first time. From this elaboration, the lifetime of a given device geometry can also be extracted. Eventually, the strong bias dependence of the gate degradation reported here implies that this phenomenon should be assessed by means of a voltage-based accelerated investigation as described in this work.Keywords
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