Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors
- 16 June 2009
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 53 (10), 1126-1129
- https://doi.org/10.1016/j.sse.2009.05.009
Abstract
No abstract availableKeywords
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