Threshold voltage control of bottom-contact n-channel organic thin-film transistors using modified drain/source electrodes

Abstract

Bottom-contact $n$ -channel ${\text{C}}_{60}$ thin-film transistors (TFTs) with drain/source electrodes modified by benzenethiol derivatives have been fabricated to investigate the influence of the modification on the transistor characteristics. Modification using methylbenzenethiol, aminobenzenethiol, and (dimethylamino)benzenethiol having electron-donating groups causes threshold voltages to shift to low voltages. In addition, the modification provides no significant decrease in saturation mobilities. A ${\text{C}}_{60}$ TFT with (dimethylamino)benzenethiol-modified electrodes has a low threshold voltage of 5.1 V as compared to that of 16.8 V for a TFT with nonmodified electrodes. The threshold-voltage shift is probably because the modification reduces electron-injection barrier height and improves electron injection into organic semiconductors.