High-performance and electrically stable C60 organic field-effect transistors

Abstract

The authors report on high-performance C60 organic field-effect transistors fabricated by physical vapor deposition. Electron mobility ranging from 2.7to5.0cm2∕Vs was achieved when treating the gate dielectric with divinyltetramethyldisiloxane bis(benzocyclobutene) and depositing C60 at room temperature. The transistors combine threshold voltages near zero, low subthreshold slopes (<0.7V/decade), on/off current ratios larger than 106, excellent reproducibility, and good electrical stability under prolonged continuous dc bias stress.