Low-voltage C60 organic field-effect transistors with high mobility and low contact resistance

Abstract

© 2008 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.2993349DOI: 10.1063/1.2993349State-of-the-art C60 organic transistors are reported here by engineering the essential electrode/semiconductor and dielectric/semiconductor interfaces. By using calcium (Ca) as the source and drain electrodes, the width-normalized contact resistance (RCW) at the electrode/semiconductor interface could be reduced to a constant value of 2 k Ω cm at a gate-source voltage (V-GS) of 2.6 V, for devices with channel lengths ranging from 25 to 200 µm. Channel transconductance is observed to follow channel length scaling, and charge mobility average value of 2.5 cm(2)/Vs at VGS < 5 V is found independent of channel length within the studied range