Improvement of carrier ballisticity in junctionless nanowire transistors
- 7 March 2011
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 98 (10), 103510
- https://doi.org/10.1063/1.3559625
Abstract
In this work we show that junctionless nanowire transistor (JNT) exhibits lower degree of ballisticity in subthreshold and higher ballisticity above threshold compare to conventional inversion-mode transistors, according to quantum mechanical simulations. The lower degradation of the ballisticity above threshold region gives the JNT near-ballistic transport performance and hence a high current drive. On the other hand, lower ballisticity in subthreshold region helps reducing the off-current and improves the subthreshold slope. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green’s function formalism in the uncoupled mode-space approach has been developed to extract the physical parameters of the devices.Keywords
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