Reduced electric field in junctionless transistors
- 15 February 2010
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 96 (7), 073510
- https://doi.org/10.1063/1.3299014
Abstract
The electric field perpendicular to the current flow is found to be significantly lower in junctionless transistors than in regular inversion-mode or accumulation-mode field-effect transistors. Since inversion channel mobility in metal-oxide-semionductor transistors is reduced by this electric field, the low field in junctionless transistor may give them an advantage in terms of current drive for nanometer-scale complementary metal-oxide semiconductor applications. This observation still applies when quantum confinement is present.Keywords
This publication has 9 references indexed in Scilit:
- Equivalent Oxide Thickness of Trigate SOI MOSFETs With High-$\kappa$ InsulatorsIEEE Transactions on Electron Devices, 2009
- Junctionless multigate field-effect transistorApplied Physics Letters, 2009
- Quantum-wire effects in trigate SOI MOSFETsSolid-State Electronics, 2007
- Quantum-mechanical effects in trigate SOI MOSFETsIEEE Transactions on Electron Devices, 2006
- A 90-nm logic technology featuring strained-siliconIEEE Transactions on Electron Devices, 2004
- Analysis of current conduction in short-channel accumulation-mode SOI PMOS devicesIEEE Transactions on Electron Devices, 1997
- On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentrationIEEE Transactions on Electron Devices, 1994
- On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientationIEEE Transactions on Electron Devices, 1994
- A review of some charge transport properties of siliconSolid-State Electronics, 1977