Atomic-resolution quantitative composition analysis using scanning transmission electron microscopy Z-contrast experiments
- 3 June 2005
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 71 (23), 235303
- https://doi.org/10.1103/physrevb.71.235303
Abstract
Here a general approach to measure quantitatively with atomic resolution the distribution of a chemical species in a host matrix is derived and applied to a case study consisting of a layer of Si buried in a GaAs matrix. Simulations and experiments performed on superlattices demonstrate a quasilinear dependence of the high-angle annular dark-field image intensity on the concentration of Si in the GaAs matrix. The results have been compared with those obtained by cross-sectional scanning tunneling microscopy on the same specimens.
Keywords
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