Microscopic Mechanisms of Self-Compensation in Si-Doped GaAs
- 27 February 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 92 (8), 086104
- https://doi.org/10.1103/physrevlett.92.086104
Abstract
We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si δ-doped layers, as well as Si δ-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phaseKeywords
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