Nonlinear dependence of N incorporation on In content in GaInNAs
- 30 December 1998
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 195 (1-4), 438-443
- https://doi.org/10.1016/s0022-0248(98)00562-4
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Photocurrent of 1eV GaInNAs lattice-matched to GaAsJournal of Crystal Growth, 1998
- GaNAs/GaInAs short-period superlattice quantum well structures grown by MOCVD using TBAs and DMHyJournal of Crystal Growth, 1998
- Growth of single phase GaAs1−xNx with high nitrogen concentration by metal–organic molecular beam epitaxyApplied Physics Letters, 1997
- Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsineApplied Physics Letters, 1997
- Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1997
- Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxyJournal of Crystal Growth, 1996
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996
- Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and BoronJapanese Journal of Applied Physics, 1993
- Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH3Applied Physics Letters, 1993
- Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy LayersJapanese Journal of Applied Physics, 1992