Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs
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- 7 September 2017
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 38 (11), 1567-1570
- https://doi.org/10.1109/led.2017.2749678
Abstract
In this paper, a device structure of high-resistivity-cap-layer HEMT (HRCL-HEMT) is developed for normally-off p-GaN gate HEMT toward high breakdown voltage and low current collapse. It demonstrates that the breakdown capability and current collapse of the device were effectively improved due to the introduction of a thick HR-GaN cap layer. The fabricated HRCL-HEMT exhibits a high breakdown voltage of 1020 V at IDS = 10 μA/mm with the substrate grounded. Meanwhile, the dynamic Ron is only 2.4 times the static Ron after off-state VDS stress of 1000 V with the substrate grounded (the OFF to ON switching time interval is set to 200 μs).Keywords
Funding Information
- Key Research and Development Program of Jiangu Province (BE2016084)
- National Natural Science Foundation of China (11404372)
- Youth Innovation Promotion Association CAS (2014277)
- National Key Scientific Instrument and Equipment Development Project of China (2013YQ470767)
- National Key Research and Development Program of China (2016YFC0801203)
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