GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform
- 1 May 2015
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
Abstract
Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6-460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage n-channel (N-ch) transistors, N-ch Schottky diodes, low-voltage N-ch transistors and p-channel transistors has been demonstrated.Keywords
This publication has 11 references indexed in Scilit:
- 2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substratePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2014
- Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructuresJournal of Applied Physics, 2014
- p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary BackbarriersIEEE Transactions on Electron Devices, 2013
- GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction ConceptIEEE Electron Device Letters, 2011
- Intrinsically limited mobility of the two-dimensional electron gas in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructuresJournal of Applied Physics, 2009
- Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN∕GaN heterojunctionsApplied Physics Letters, 2008
- Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate StructureIEEE Transactions on Electron Devices, 2007
- P-Channel InGaN-HFET Structure Based on Polarization DopingIEEE Electron Device Letters, 2004
- Dislocation scattering in a two-dimensional electron gasApplied Physics Letters, 2000
- High electron mobility GaN/AlxGa1−xN heterostructures grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991