N‐plasma assisted MBE grown GaN films on Si(111)
- 6 June 2006
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 243 (7), 1416-1420
- https://doi.org/10.1002/pssb.200565439
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Comparison of GaN epitaxial films on silicon nitride buffer and Si(111)Solid-State Electronics, 2002
- Multicolored light emitters on silicon substratesApplied Physics Letters, 1998
- GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxyApplied Physics Letters, 1998
- Photoluminescence properties of GaN grown on compliant silicon-on-insulator substratesApplied Physics Letters, 1997
- GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layerApplied Physics Letters, 1997
- High quality GaN–InGaN heterostructures grown on (111) silicon substratesApplied Physics Letters, 1996
- Reactive crystal growth in two dimensions: Silicon nitride on Si(111)Physical Review B, 1995
- High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substratesApplied Physics Letters, 1995
- Microstructure and photoluminescence of GaN grown on Si(111) by plasma-assisted molecular beam epitaxyApplied Physics Letters, 1994
- Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layerJournal of Crystal Growth, 1991