Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage
- 30 June 2010
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 54 (6), 660-664
- https://doi.org/10.1016/j.sse.2010.01.001
Abstract
No abstract availableKeywords
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