GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility
- 22 June 2007
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 46 (7L), L599
- https://doi.org/10.1143/jjap.46.l599
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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