High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates
- 31 January 2008
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 52 (1), 150-155
- https://doi.org/10.1016/j.sse.2007.07.035
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel MobilityJapanese Journal of Applied Physics, 2007
- Amphoteric Behavior of Impurities in GaN Film Grown on Si SubstrateJapanese Journal of Applied Physics, 2007
- Recessed-gate enhancement-mode GaN HEMT with high threshold voltageElectronics Letters, 2005
- High-voltage normally off GaN MOSFETs on sapphire substratesIEEE Transactions on Electron Devices, 2004
- High Breakdown Voltage Undoped AlGaN–GaN Power HEMT on Sapphire Substrate and Its Demonstration for DC–DC Converter ApplicationIEEE Transactions on Electron Devices, 2004
- MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistorsApplied Physics Letters, 2004
- High‐temperature operation of an AlGaN/GaN HFET on a Si substrate using a thin GaN filmphysica status solidi (c), 2003
- Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate OxideJournal of the Electrochemical Society, 2002
- High transconductance-normally-off GaN MODFETsElectronics Letters, 1995
- Wide bandgap compound semiconductors for superior high-voltage unipolar power devicesIEEE Transactions on Electron Devices, 1994