High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design
- 28 January 2016
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nanotechnology
- Vol. 15 (2), 289-294
- https://doi.org/10.1109/tnano.2016.2521897
Abstract
Reconfigurable field-effect transistors (RFETs) are of interest as devices for dynamically switching between n- and p-type polarity which enables different logic computations using the same hardware. So far, RFETs have been realized with one or even two additional program gates for accomplishing reconfigurability. This paper presents an RFET design with just one single-gate on a silicon nanowire channel. Based on measured and device simulation data of a double-gate (DG) RFET, it is shown that the proposed simplified single-gate (SG) RFET achieves the same functionality and dc characteristics as the more complex DG-RFET. Besides reducing the wiring for the program gate(s), the SG-RFET has the additional advantage of being scalable to smaller channel length and thus achieving higher operating speed.Keywords
Funding Information
- German National Science Foundation within the Excellence Cluster “Center for Advancing Electronics Dresden,”
- CAPES (88881.030371/2013-01)
This publication has 19 references indexed in Scilit:
- Functionality-Enhanced Logic Gate Design Enabled by Symmetrical Reconfigurable Silicon Nanowire TransistorsIEEE Transactions on Nanotechnology, 2015
- Reconfigurable nanowire electronics – A reviewSolid-State Electronics, 2014
- Top–Down Fabrication of Gate-All-Around Vertically Stacked Silicon Nanowire FETs With Controllable PolarityIEEE Transactions on Nanotechnology, 2014
- Polarity-Controllable Silicon Nanowire Transistors With Dual Threshold VoltagesIEEE Transactions on Electron Devices, 2014
- Configurable Logic Gates Using Polarity-Controlled Silicon Nanowire Gate-All-Around FETsIEEE Electron Device Letters, 2014
- Nanowire systems: technology and designPhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2014
- Ge/Si nanowire heterostructures as high-performance field-effect transistorsNature, 2006
- Ambipolar-to-Unipolar Conversion of Carbon Nanotube Transistors by Gate Structure EngineeringNano Letters, 2004
- A Numerical Study of Scaling Issues for Schottky-Barrier Carbon Nanotube TransistorsIEEE Transactions on Electron Devices, 2004
- Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETsIEEE Electron Device Letters, 1993