GaN/AlGaN p-channel inverted heterostructure JFET
- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (8), 452-454
- https://doi.org/10.1109/led.2002.801295
Abstract
A novel GaN/AlGaN p-channel inverted heterostructure junction field-effect transistor (HJFET) with a n/sup +/-type gate is proposed and demonstrated. A new superlattice aided strain compensation techniques was used for fabricating high quality GaN/AlGaN p-n junction. The p-channel HJFET gate leakage current was below 10 nA, and the threshold voltage was 8 V, which is close to that of typical n-channel HFETs. This new HJFET device opens up a way for fabricating nitride based complimentary integrated circuits.Keywords
This publication has 7 references indexed in Scilit:
- Maximum current in nitride-based heterostructure field-effect transistorsApplied Physics Letters, 2002
- Optical and electrical properties of Mg-doped p-type AlxGa1−xNApplied Physics Letters, 2002
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect TransistorJapanese Journal of Applied Physics, 2001
- Accumulation hole layer in p-GaN/AlGaN heterostructuresApplied Physics Letters, 2000
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substratesIEEE Electron Device Letters, 1999
- Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructuresJournal of Applied Physics, 1999
- GaAs Devices and CircuitsPublished by Springer Science and Business Media LLC ,1987