AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor
- 1 November 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (11A), L1142
- https://doi.org/10.1143/jjap.40.l1142
Abstract
Novel, current collapse free, double heterostructure AlGaN/InGaN/GaN field effect transistors (DHFETs) are fabricated on the insulating SiC substrates. The simulations show that a combined effect of the bandgap offsets and polarization charges provides an excellent 2D carrier confinement. These devices demonstrate output RF powers as high as 4.3 W/mm in CW mode and 6.3 W/mm in the pulsed mode, with the gain compression as low as 4 dB.Keywords
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