Comparison of 6H-SiC, 3C-SiC, and Si for power devices
- 1 March 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (3), 645-655
- https://doi.org/10.1109/16.199372
Abstract
No abstract availableKeywords
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