Ohmic and rectifying electrical contacts to n‐ or p‐type semiconducting thin films were developed and characterized. Upon annealing for 300s at 1523 K, Ni, Au‐Ta, and Cr were ohmic on n‐type material. , similarly heated to 1123 K, and as‐deposited Al also showed ohmic character. had the lowest room temperature contact resistivity of . For p‐type , annealed for 1800s at 1473 K and Al annealed for 180s at 1150 K exhibited ohmic behavior. Al was the better of the two, having a room temperature contact resistivity of . High temperature measurements of Al and contacts showed that these contacts are stable during electrical operation to at least 673 K for 8h in air. At this temperature the contact resistivity of and Al on decreased by a factor of two and ten, respectively. Contacts of Au were shown to be rectifying on with a barrier height of 1.20V.