Electrical and Interfacial Characterization of Atomic Layer Deposited High- $\kappa$ Gate Dielectrics on GaAs for Advanced CMOS Devices
- 23 July 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 54 (8), 1831-1837
- https://doi.org/10.1109/ted.2007.901261
Abstract
In this paper, electrical and interfacial properties of MOS capacitors with atomic layer deposited (ALD) Al2O3, HfO2, and HfAlO gate dielectrics on sulfur-passivated (S-passivated) GaAs substrates were investigated. HfAlO on p-type GaAs has shown superior electrical properties over Al2O3 or HfO2 on GaAs, and it is attributed to the reduction of the Ga-O formation at the interfacial layer. HfAlO on p-type GaAs exhibits the best electrical properties after postdeposition annealing (PDA) at 500degC. It is found that PDA, at above 500degC, causes a significant amount of Ga and As out-diffusion into the high-k dielectric, which degrades the interface, as well as bulk high-k properties.Keywords
This publication has 26 references indexed in Scilit:
- Characteristics of sputtered Hf1−xSixO2∕Si∕GaAs gate stacksApplied Physics Letters, 2006
- Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayerIEEE Electron Device Letters, 2006
- Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layerApplied Physics Letters, 2006
- Hf O 2 and Al2O3 gate dielectrics on GaAs grown by atomic layer depositionApplied Physics Letters, 2005
- GaAs MOSFET Using InAlP Native Oxide as Gate DielectricIEEE Electron Device Letters, 2004
- GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer depositionApplied Physics Letters, 2003
- GaAs MOSFET with oxide gate dielectric grown by atomic layer depositionIEEE Electron Device Letters, 2003
- Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitrideJournal of Applied Physics, 2001
- Interface characterization of Si3N4/Si/GaAs heterostructures after high temperature annealingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- A single-frequency approximation for interface-state density determinationSolid-State Electronics, 1980