Morphology of silicon whiskers grown by the VLS-technique
- 31 May 1971
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 9, 326-329
- https://doi.org/10.1016/0022-0248(71)90250-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Mechanism of Branching and Kinking during VLS Crystal GrowthJournal of the Electrochemical Society, 1968
- Investigation of epitaxial silicon layers grown in the presence of small quantities of goldPhilosophical Magazine, 1967
- Defects in Silicon Crystals Grown by the VLS TechniqueJournal of Applied Physics, 1967
- Controlled Vapor-Liquid-Solid Growth of Silicon CrystalsJournal of the Electrochemical Society, 1966
- Silicon whisker growth and epitaxy by the vapour-liquid-solid mechanismBritish Journal of Applied Physics, 1965
- Study of the Filamentary Growth of Silicon Crystals from the VaporJournal of Applied Physics, 1964
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964