Investigation of epitaxial silicon layers grown in the presence of small quantities of gold

Abstract

Three epitaxial silicon layers, grown under varying conditions in the presence of small quantities of gold, are examined, both before and after etching, by transmission and scanning electron microscopy. The results show that the presence of an extremely thin silicon/gold alloy layer (< 100 Å) on the growing surface can extensively alter the growth characteristics. Two possible growth mechanisms involving such an ultra-thin alloy layer are outlined.