Defects in Silicon Crystals Grown by the VLS Technique

Abstract

Crystalline defects have been studied in silicon crystals grown by the vapor‐liquid‐solid (VLS) technique. Most of these crystals are highly perfect. However, some crystals contain defects such as dislocations, stacking faults, and second‐phase regions. An elastic stress field, resulting from differential thermal contraction was found near the tip of every crystal. The formation and prevention of these defects and their relation to the VLS growth mechanism are discussed in detail. The morphology of the prismatic side faces of the crystals depends on deposition temperature, and is primarily due to vapor‐solid deposit. This deposit is perfect even at deposition temperatures as low as 700°C.