Lattice-matched, epitaxial, silicon-insulating lanthanum yttrium oxide heterostructures
- 4 February 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (5), 766-768
- https://doi.org/10.1063/1.1445465
Abstract
We demonstrate a ternary ( La x Y 1−x ) 2 O 3 thin-film oxide that can be grown epitaxially on Si(111) substrates with a lattice constant that can be matched to twice the lattice constant of silicon. We further show that silicon can then be deposited epitaxially (though with a high defect density) on this oxide such that epitaxial silicon/oxide/silicon structures may be grown. We discuss the microstructural relationships and the growth modes for the oxide on silicon and silicon on oxide growths.This publication has 13 references indexed in Scilit:
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