Heteroepitaxial growth of Y2O3 films on silicon
- 24 July 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (4), 360-361
- https://doi.org/10.1063/1.102420
Abstract
Yttria (Y2 O3 ) films have been grown on Si (100) and Si (111) substrates heated at 800 °C by vacuum evaporation. X‐ray diffraction and reflection high‐energy electron diffraction observations reveal the heteroepitaxial growth of Y2 O3 films on Si (100) and Si (111) substrates. The (111) oriented Y2 O3 films are grown directly on Si (111) substrates. The (100) oriented Y2 O3 films are grown on the thin (Y2 O3 )0.09 (ZrO2 )0.91 layer predeposited on Si (100) substrates instead of direct growth on Si (100) substrates.Keywords
This publication has 7 references indexed in Scilit:
- Epitaxial growth of yttria-stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter depositionApplied Physics Letters, 1988
- Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on SiliconJapanese Journal of Applied Physics, 1988
- Interfacial Superstructure of AlN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1988
- Epitaxial Growth of Ba2YCu3Ox Thin Film on Epitaxial ZrO2/Si(100)Japanese Journal of Applied Physics, 1988
- Study of thermally oxidized yttrium films on siliconApplied Physics Letters, 1987
- Growth of crystalline zirconium dioxide films on siliconJournal of Applied Physics, 1985
- Heteroepitaxial Si films on yttria-stabilized, cubic zirconia substratesApplied Physics Letters, 1983