1.5–1.6-μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
- 15 May 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (10), 845-847
- https://doi.org/10.1063/1.93786
Abstract
The first successful preparation of optically pumped and current injection Ga0.47In0.53As/Al0.48 In0.42As multiquantum well lasers is reported. These devices, operating at room temperature in the 1.5–1.6‐μm range, have been prepared by molecular beam epitaxy with well thicknesses as low as 80–90 Å and barrier thicknesses as low as 30 Å. In the broad area devices with a total active layer thickness of 0.14 μm we have observed threshold current density as low as 2.4 kA/cm2.This publication has 9 references indexed in Scilit:
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