Compositional dependence of band-gap energy and conduction-band effective mass of In1−x−yGaxAlyAs lattice matched to InP
- 1 September 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (5), 476-478
- https://doi.org/10.1063/1.93537
Abstract
The band‐gap energy and the electron effective mass of In1−x−yGaxAlyAs lattice matched to InP have been determined as a function of Al content. From photoluminescence measurements we obtain Eg(eV) = (0.76±0.04)+(1.04±0.10)y+(0.87±0.13)y2. The electron effective mass is determined from the plasma frequencies measured with Raman scattering in n‐type samples. Its compositional dependence is given by m* = (0.0427±0.0015)+(0.0683±0.0007)y.This publication has 5 references indexed in Scilit:
- Ga0.47In0.53As: A ternary semiconductor for photodetector applicationsIEEE Journal of Quantum Electronics, 1980
- Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InPApplied Physics Letters, 1978
- Some optical properties of the AlxGa1−xAs alloys systemJournal of Applied Physics, 1976
- Fundamental Energy Gaps of AlAs and Alp from Photoluminescence Excitation SpectraPhysical Review B, 1973
- Electronic Structures of Semiconductor AlloysPhysical Review B, 1970