Molecular-beam epitaxial growth of uniform Ga0.47In0.53As with a rotating sample holder
- 15 October 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (8), 607-609
- https://doi.org/10.1063/1.92819
Abstract
Ga0.47In0.53As and Al0.48In0.52As were grown lattice matched to InP substrates with a rotating substrate holder. The Ga, In, and Al beams were supplied by separate effusion cells and the uniformity of the resulting layers was evaluated with x‐ray rocking curves for different rotation speeds. Lateral variation of the lattice constant as small as 10−5 per cm may be achieved with a rotation speed of 3 rpm. The full width at half‐maximum of the x‐ray spectrum from the epitaxial layer is comparable to that of the substrate indicating that there is practically no compositional grading.Keywords
This publication has 3 references indexed in Scilit:
- Growth of extremely uniform layers by rotating substrate holder with molecular beam epitaxy for applications to electro-optic and microwave devicesApplied Physics Letters, 1981
- Molecular beam epitaxial growth of uniform In0.53Ga0.47As on InP with a coaxial In-Ga ovenJournal of Applied Physics, 1981
- Growth of Ga y In1 − y As / InP Heterostructures by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1978