On the stress dependence of the dislocation velocity in silicon
- 16 November 1987
- journal article
- research article
- Published by Wiley in physica status solidi (a)
- Vol. 104 (1), 183-192
- https://doi.org/10.1002/pssa.2211040113
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- On the yield point of floating-zone silicon single crystalsPhilosophical Magazine A, 1987
- Velocity of twinning partial dislocations in siliconJournal of Applied Physics, 1987
- Experimental study of the double kink formation kinetics and kink mobility on the dislocation line in Si single crystalsphysica status solidi (a), 1986
- In situX-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystalsPhilosophical Magazine A, 1983
- The plastic deformation of silicon between 300°C and 600°CPhilosophical Magazine A, 1981
- On the mobility of dislocations in silicon by in situ straining in a high-voltage electron microscopePhilosophical Magazine A, 1981
- Velocities of screw and 60° dislocations in n- and p-type siliconphysica status solidi (a), 1979
- On the mobility of partial dislocations in siliconPhilosophical Magazine, 1977
- Velocities of Screw and 60°‐Dislocations in SiliconPhysica Status Solidi (b), 1972
- Velocities and Densities of Dislocations in Germanium and Other Semiconductor CrystalsJournal of Applied Physics, 1962