High transconductance-normally-off GaN MODFETs
- 3 August 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (16), 1389-1390
- https://doi.org/10.1049/el:19950921
Abstract
Normally-off GaN based modulation doped field-effect transistors have been fabricated. The extrinsic transconductance of MODFETs with gate and channel lengths of 3 and 5 µm, respectively, is as high as 120 mS/mm. The devices exhibit 300 mA/mm current at a positive gate bias of 3 V. This transconductance value compares very favourably with the 45 mS/mm and 24 mS/mm reported earlier for 1 and 0.23 µm gate devices, respectively.Keywords
This publication has 6 references indexed in Scilit:
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °CApplied Physics Letters, 1995
- Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistorApplied Physics Letters, 1994
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Monte Carlo simulation of electron transport in gallium nitrideJournal of Applied Physics, 1993
- Progress and prospects for GaN and the III–V nitride semiconductorsThin Solid Films, 1993
- III-V nitrides for electronic and optoelectronic applicationsProceedings of the IEEE, 1991