Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs
- 25 January 2018
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 65 (3), 877-883
- https://doi.org/10.1109/tns.2018.2798295
Abstract
Two radiation hardening processes for shallow trench isolation (STI), i.e., Si + implantation and STI oxide nitridation are investigated, including the impact on nominal electrical characteristics and radiation hardness. The total ionizing dose effects of the nMOS devices are proved to be sensitive to the STI radiation hardening process conditions. There are optimum process conditions to achieve the best effectiveness of radiation hardening. Then, a 130-nm radiation-hardened PDSOI technology has been developed. The radiation hardness is verified by static random access memories with small storage capacities.Keywords
Funding Information
- National Postdoctoral Program for Innovative Talents (BX201600037)
- National Natural Science Foundation of China (61704031, 11505033)
- Distinguished Young Scientist Program of Guangdong Province (2015A030306002)
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