Total ionizing dose effects in MOS oxides and devices
- 9 July 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 50 (3), 483-499
- https://doi.org/10.1109/tns.2003.812927
Abstract
This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.Keywords
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