A Binary Tunnel Field Effect Transistor with a Steep Sub-threshold Swing and Increased ON Current
- 1 December 2010
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 49 (12R), 120203
- https://doi.org/10.1143/jjap.49.120203
Abstract
A variant tunnel field effect transistor structure called the binary tunnel field effect transistor (BTFET) for low voltage and near ideal switching characteristics is proposed. The BTFET relies on a binary tunneling distance (HIGH and LOW) for its operation to achieve a steep sub-threshold swing with a predicted range of 5 mV/dec. The transition of tunneling distance from HIGH to LOW state is a step-function of the gate voltage with the threshold voltage as a transition voltage. BTFET has a high on-current due to the high gate electric field and a large tunneling cross section area. An orientation dependent non-local band-to-band tunneling model was used to analyze the DC characteristics of the device.Keywords
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