Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor
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- 18 November 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 58 (1), 80-86
- https://doi.org/10.1109/ted.2010.2089525
Abstract
Low operating power is an important concern for sub-45-nm CMOS integrated circuits. Scaling of devices to below 45 nm leads to an increase in active power dissipation (CV2.f) and subthreshold power (IOFF.VDD)Hence, new device innovations are being explored to address these problems. In this paper, we simulate and experimentally investigate the source-pocket tunnel field-effect transistor (TFET), which is based on the principle of band-to-band tunneling, p-i-n and source-pocket TFETs are fabricated with different pocket conditions to observe the effect of the source-side pocket on device performance. Different annealing schemes (spike and conventional rapid thermal annealing) are used to study the effect of annealing conditions on TFET performance. The source-pocket TFET shows a higher ION (~10 times) and steeper subthreshold swing as compared to a p-i-n TFET. The ambipolar conduction is also reduced by using a low-doped drain extension. Low-temperature measurements of the source-pocket TFET were performed, and the subthreshold swing of the source-pocket TFET shows very little temperature dependence, which confirms the dominant source injection mechanism to be band-to-band tunneling.Keywords
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