Growth of β-FeSi2 Thin Film on Si (111) by Metal-Organic Chemical Vapor Deposition
- 1 May 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (5A), L460
- https://doi.org/10.1143/jjap.40.l460
Abstract
We succeeded for the first time in preparing a high-quality (101)-oriented epitaxial β-FeSi2 film on Si(111) wafer by metal-organic chemical vapor deposition (MOCVD) using Fe(CO)5 and SiH4 as source materials. The full width at half maximum (FWHM) of the rocking curve of the β-FeSi2 (202) peak was 0.46 degree for the film deposited at 750°C at a rate of 4 nm/min. Moreover, a smooth-surface film of up to 650 nm thickness could be deposited by this method. Carbon content in the film was less than 0.1 at%.Keywords
This publication has 11 references indexed in Scilit:
- Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active RegionJapanese Journal of Applied Physics, 2000
- Y2O3-Stabilized ZrO2 Thin Films Prepared by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1998
- Formation of β-FeSi2Layers on Si(001) SubstratesJapanese Journal of Applied Physics, 1997
- Ion-Beam Synthesized Semiconducting β-FeSi2 Controlled By Annealing Procedures And Phase-TransitionsMRS Proceedings, 1997
- Optical absorption and photoluminescence studies of β-FeSi2 prepared by heavy implantation of Fe+ ions into SiJournal of Applied Physics, 1996
- On the origin of the 1.5 μm luminescence in ion beam synthesized β-FeSi2Applied Physics Letters, 1996
- Chemical beam epitaxy of iron disilicide on siliconJournal of Crystal Growth, 1995
- Iron silicide growth on Si(111) substrate using the metalorganic vapour phase epitaxy processJournal of Crystal Growth, 1994
- Co-evaporated thin films of semiconducting β-FeSi2Applied Surface Science, 1993
- Epitaxial films of semiconducting FeSi2 on (001) siliconApplied Physics Letters, 1990