Epitaxial films of semiconducting FeSi2 on (001) silicon
- 21 May 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (21), 2126-2128
- https://doi.org/10.1063/1.103235
Abstract
Epitaxial thin films of the semiconducting transition metal silicide, beta‐FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]‖‖Si〈110〉. This heteroepitaxial relationship has a common unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.Keywords
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