Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region
- 1 October 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (10B), L1013
- https://doi.org/10.1143/jjap.39.l1013
Abstract
Room temperature electroluminescence (EL) was obtained for the first time from a Si-based light emitting diode with semiconducting silicide (β-FeSi2) active region. The peak wavelength was 1.6 µm and it is from β-FeSi2 balls embedded in a Si p-n junction. An a-axis oriented β-FeSi2 layer was grown on n+-(001) Si by reaction deposition epitaxy (RDE), then p- and p+-Si layers were grown by molecular beam epitaxy (MBE). The β-FeSi2 aggregated into balls with about 100 nm diameter in this process. The EL intensity increased superlinearly with increase of the injected current density, and reasonable EL was obtained at current density above 10 A/cm2, though the photoluminescence (PL) was difficult to be detected at room temperature.Keywords
This publication has 17 references indexed in Scilit:
- Optimum annealing condition forJournal of Luminescence, 2000
- Improvement of 1.5 µm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi 2 Balls in Si by High Temperature AnnealingJapanese Journal of Applied Physics, 1999
- Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi 2 Balls Embedded in Si CrystalsJapanese Journal of Applied Physics, 1998
- Aggregation of Monocrystalline β-FeSi 2 by Annealing and by Si Overlayer GrowthJapanese Journal of Applied Physics, 1997
- Formation of β-FeSi2Layers on Si(001) SubstratesJapanese Journal of Applied Physics, 1997
- Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diodeApplied Physics Letters, 1994
- Optical and electrical characterization of β-FeSi2 epitaxial thin films on silicon substratesJournal of Applied Physics, 1991
- Quantum size effects on photoluminescence in ultrafine Si particlesApplied Physics Letters, 1990
- Boron heavy doping for Si molecular beam epitaxy using a HBO2 sourceApplied Physics Letters, 1987
- Optical properties of semiconducting iron disilicide thin filmsJournal of Applied Physics, 1985