Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
- 26 November 2012
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 101 (22)
- https://doi.org/10.1063/1.4768218
Abstract
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ~50 cm2/V.s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.Comment: 4 pages, 4 figures; to appear in Appl. Phys. LetKeywords
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