Intrinsic and extrinsic performance limits of graphene devices on SiO2
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- 23 March 2008
- journal article
- Published by Springer Science and Business Media LLC in Nature Nanotechnology
- Vol. 3 (4), 206-209
- https://doi.org/10.1038/nnano.2008.58
Abstract
The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that acoustic phonon scattering[4-6] is indeed independent of n, and places an intrinsic limit on the resistivity in graphene of only 30 Ohm at room temperature (RT). At a technologically-relevant carrier density of 10^12 cm^-2, the mean free path for electron-acoustic phonon scattering is >2 microns, and the intrinsic mobility limit is 2x10^5 cm^2/Vs, exceeding the highest known inorganic semiconductor (InSb, ~7.7x10^4 cm^2/Vs[9]) and semiconducting carbon nanotubes (~1x10^5 cm^2/Vs[10]). We also show that extrinsic scattering by surface phonons of the SiO2 substrate[11,12] adds a strong temperature dependent resistivity above ~200 K[8], limiting the RT mobility to ~4x10^4 cm^2/Vs, pointing out the importance of substrate choice for graphene devices[13].Comment: 16 pages, 3 figureKeywords
Other Versions
This publication has 27 references indexed in Scilit:
- Giant Intrinsic Carrier Mobilities in Graphene and Its BilayerPhysical Review Letters, 2008
- Electronic transport in graphene: A semiclassical approach including midgap statesPhysical Review B, 2007
- Temperature dependent electron transport in grapheneThe European Physical Journal Special Topics, 2007
- Two-dimensional atomic crystalsProceedings of the National Academy of Sciences of the United States of America, 2005
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004
- Extraordinary Mobility in Semiconducting Carbon NanotubesNano Letters, 2003
- Quantum Transport in Two-Dimensional Graphite SystemJournal of the Physics Society Japan, 1998
- Electrical conductivity of a graphite layerPhysical Review B, 1980
- Remote polar phonon scattering in silicon inversion layersSolid State Communications, 1979
- Hall Effect and Conductivity of InSbPhysical Review B, 1955