A comparative study of gate direct tunneling and drain leakage currents in n-MOSFET's with sub-2 nm gate oxides
- 1 January 2000
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (8), 1636-1644
- https://doi.org/10.1109/16.853042
Abstract
This work examines different components of leakage current in scaled n-MOSFET's with ultrathin gate oxides (1.4-2.0 nm), Both gate direct tunneling and drain leakage currents are studied by theoretical modeling and experiments, and their effects on the drain current are investigated and compared. It concludes that the source and drain extension to the gate overlap regions have strong effects on device performance in terms of gate tunneling and off-state drain currents.Keywords
This publication has 29 references indexed in Scilit:
- Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regimeIEEE Transactions on Electron Devices, 2000
- Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devicesIEEE Transactions on Electron Devices, 1999
- A new quasi-2-D model for hot-carrier band-to-band tunneling currentIEEE Transactions on Electron Devices, 1999
- Polarity dependent gate tunneling currents in dual-gate CMOSFETsIEEE Transactions on Electron Devices, 1998
- New insights in the relation between electron trap generation and the statistical properties of oxide breakdownIEEE Transactions on Electron Devices, 1998
- Prospects for low-power, high-speed MPUs using 1.5 nm direct-tunneling gate oxide MOSFETsSolid-State Electronics, 1997
- 1.5 nm direct-tunneling gate oxide Si MOSFET'sIEEE Transactions on Electron Devices, 1996
- A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETsIEEE Transactions on Electron Devices, 1996
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Tunnelling from a Many-Particle Point of ViewPhysical Review Letters, 1961