Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices
- 1 July 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 46 (7), 1464-1471
- https://doi.org/10.1109/16.772492
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
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