Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor
- 18 February 2008
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 92 (7), 073502
- https://doi.org/10.1063/1.2857501
Abstract
A unique feature of the extremely long-range-extended blockade regime with its shape of a long stick, where the Coulomb blockade oscillation and negative differential conductance peak-positions can be systematically and precisely modulated for both extremely-wide and ranges, was clearly observed in a room-temperature-operating silicon single hole transistor. These results originate from the large quantum level spacing, large tunnel-barrier height, small tunnel-barrier curvature, small bias-induced barrier modulation, and large voltage gain, attributing to the formation of an ultrasmall dot in the gently sloped tunnel barriers along the [100] Si nanowire channel having the large subband modulation.
This publication has 17 references indexed in Scilit:
- Compact analytical model for room-temperature-operating silicon single-electron transistors with discrete quantum energy levelsIEEE Transactions on Nanotechnology, 2006
- Voltage gain dependence of the negative differential conductance width in silicon single-hole transistorsApplied Physics Letters, 2006
- Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid ProcessJapanese Journal of Applied Physics, 2005
- Manipulation and detection of single electrons for future information processingJournal of Applied Physics, 2005
- Single-mode subwavelength waveguide with channel plasmon-polaritons in triangular grooves on a metal surfaceApplied Physics Letters, 2004
- Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperatureApplied Physics Letters, 2004
- Room-temperature demonstration of highly-functional single-hole transistor logic based on quantum mechanical effectElectronics Letters, 2004
- Large Electron Addition Energy above 250 meV in a Silicon Quantum Dot in a Single-Electron TransistorJapanese Journal of Applied Physics, 2001
- Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gatesApplied Physics Letters, 2000
- Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrateApplied Physics Letters, 1996