Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate
- 17 June 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (25), 3585-3587
- https://doi.org/10.1063/1.116645