Room-temperature demonstration of highly-functional single-hole transistor logic based on quantum mechanical effect

1 January 2004

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 40 (13), 836-837
https://doi.org/10.1049/el:20040554

Abstract

Novel highly-functional single-hole transistor (SHT) logic is proposed. An SHT is fabricated which shows Coulomb blockade and negative differential conductance (NDC) due to discrete quantum levels in the ultra-small dot at room temperature. By utilising gate-controllable NDC, exclusive-OR operation is successfully demonstrated in just one SHT at room temperature.

Keywords

This publication has 4 references indexed in Scilit:

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