Asymmetric broad waveguide diode lasers (/spl lambda/ = 980 nm) of large equivalent transverse spot size and low temperature sensitivity
- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 14 (8), 1046-1048
- https://doi.org/10.1109/lpt.2002.1021964
Abstract
980-nm InGaAs-InGaAsP diode lasers of asymmetric broad-waveguide (BW) transverse structure are demonstrated. Single-transverse-mode devices have equivalent (transverse) spot sizes of 0.8 /spl mu/m (i.e., significantly larger than for symmetric BW structures), which are obtained at no price in device-parameter temperature sensitivity. Built-in discrimination against the first-order transverse mode allows fundamental-transverse-mode operation in relatively narrow beams (/spl theta//sub /spl perp// = 34/spl deg/). For 2-mm-long 100-/spl mu/m-wide-stripe uncoated devices with double-quantum-well active regions, the threshold-current density is as low as 190 A/cm/sup 2/, while the characteristic temperatures for the threshold-current density T/sub 0/, and the external differential quantum efficiency T/sub 1/ are high: 183 K and 650 K, respectively.Keywords
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