High power continuous wave output from diode lasers using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 µm wide stripe 1–3 mm long diode lasers were studied. 1.8 W of continuous wave optical power per uncoated facet was obtained at an injection current of 4.7 A (36 mW/µm). The threshold current density is 270–400 A/cm2.