High power low confinement AIGaAs/GaAs single quantum well laser diode operating in the fundamental lateral mode
- 24 August 2005
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- High-power, high-efficiency, high-brightness long-wavelength laser diodesPublished by SPIE-Intl Soc Optical Eng ,2006
- Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiersIEEE Journal of Quantum Electronics, 1994